Gunay, MehmetDas, PriyamYuce, EmrePolat, Emre OzanBek, AlpanTasgin, Mehmet Emre2023-10-192023-10-19202312192-86062192-8614https://doi.org/10.1515/nanoph-2022-0555https://hdl.handle.net/20.500.12469/5592Integration of devices generating non-classical states (such as entanglement) into photonic circuits is one of the major goals in achieving integrated quantum circuits (IQCs). This is demonstrated successfully in recent decades. Controlling the non-classicality generation in these micron scale devices is also crucial for the robust operation of the IQCs. Here, we propose a micron-scale quantum entanglement device whose nonlinearity (so the generated non classicality) can be tuned by several orders of magnitude via an applied voltage without altering the linear response. Quantum emitters (QEs), whose level-spacing can be tuned by voltage, are embedded into the hotspot of a metal nanostructure (MNS). QE-MNS coupling introduces a Fano resonance in the nonlinear response. Nonlinearity, already enhanced extremely due to localization, can be controlled by the QEs' level-spacing. Nonlinearity can either be suppressed or be further enhanced by several orders. Fano resonance takes place in a relatively narrow frequency window so that similar to meV voltage-tunability for QEs becomes sufficient for a continuous turning on/off of the non-classicality. This provides as much as 5 orders of magnitude modulation depths.eninfo:eu-repo/semantics/openAccessFano resonancesStatesquantum integrated circuitsquantum opticsStatesvoltage controlArticle229237212WOS:00091630970000110.1515/nanoph-2022-05552-s2.0-85146642985Q1Q1