An Efficient Architecture of Adder Using Fault-Tolerant Majority Gate Based on Atomic Silicon Nanotechnology

dc.contributor.author Ahmadpour, S.
dc.contributor.author Navimipour, N.J.
dc.contributor.author Bahar, A.N.
dc.contributor.author Yalcin, S.
dc.date.accessioned 2023-10-19T15:05:28Z
dc.date.available 2023-10-19T15:05:28Z
dc.date.issued 2023
dc.description.abstract It is expected that Complementary Metal Oxide Semiconductor (CMOS) implementation with ever-smaller transistors will soon face significant issues such as device density, power consumption, and performance due to the requirement for challenging fabrication processes. Therefore, a new and promising computation paradigm, nanotechnology, can replace CMOS technology. In addition, a new frontier in computing is opened up by nanotechnology called atomic silicon, which has the same extraordinary behavior as quantum dots. Furthermore, Dangling Bond (DB) quantum dots play a vital role in atomic silicon nanotechnology. On the other hand, atomic silicon circuits are highly prone to defects, so suggested fault-tolerant structures in this technology play important roles. The addition operator holds immense significance in digital signal processing and computer arithmetic operations, making it one of the primary operations in digital circuits. Consequently, full adders have gained popularity and find widespread use in efficiently solving mathematical problems. In the following paper, we will explore the development of an efficient fault-tolerant 3-input majority gate (FT-MV3) using DBs, further enhancing the capabilities of digital circuits. A rule-based approach to the redundant DB achieves a less complex and more robust atomic silicon layout for the MV3. We use the powerful SiQAD tool to simulate all the proposed circuits. In addition, to confirm the efficiency of the proposed gate, all common defects, such as single and double dangling bond omission defects and DB dislocation defects, are examined. The suggested majority gate is 100% and 66.66% tolerant against single and double DB omission defects, respectively. Furthermore, a new full adder design is introduced using the suggested FT-MV3 gate. The results show that the suggested full adder is 44.44% and 35.35% tolerant against single and double DB omission defects. Finally, a fault-tolerant four-bit adder is designed based on the proposed full adder. IEEE en_US
dc.identifier.doi 10.1109/TNANO.2023.3309908 en_US
dc.identifier.issn 1536-125X
dc.identifier.issn 1941-0085
dc.identifier.scopus 2-s2.0-85169706638 en_US
dc.identifier.uri https://doi.org/10.1109/TNANO.2023.3309908
dc.identifier.uri https://hdl.handle.net/20.500.12469/4911
dc.language.iso en en_US
dc.publisher Institute of Electrical and Electronics Engineers Inc. en_US
dc.relation.ispartof IEEE Transactions on Nanotechnology en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject Adders en_US
dc.subject Atomic Silicon en_US
dc.subject Dangling Bond (DB) en_US
dc.subject Fault tolerance en_US
dc.subject Fault tolerant systems en_US
dc.subject Fault-Tolerant en_US
dc.subject Layout en_US
dc.subject Logic gates en_US
dc.subject Quantum dots en_US
dc.subject Silicon en_US
dc.subject Silicon Quantum Atomic Designer en_US
dc.subject Atoms en_US
dc.subject CMOS integrated circuits en_US
dc.subject Dangling bonds en_US
dc.subject Digital signal processing en_US
dc.subject Energy efficiency en_US
dc.subject Fault tolerance en_US
dc.subject MOS devices en_US
dc.subject Nanocrystals en_US
dc.subject Oxide semiconductors en_US
dc.subject Semiconductor quantum dots en_US
dc.subject Atomic silicon en_US
dc.subject Dangling bond en_US
dc.subject Efficient architecture en_US
dc.subject Fault- tolerant systems en_US
dc.subject Fault-tolerant en_US
dc.subject Full adders en_US
dc.subject Layout en_US
dc.subject Majority gates en_US
dc.subject Quantum dot en_US
dc.subject Silicon quantum atomic designer en_US
dc.subject Adders en_US
dc.title An Efficient Architecture of Adder Using Fault-Tolerant Majority Gate Based on Atomic Silicon Nanotechnology en_US
dc.type Article en_US
dspace.entity.type Publication
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gdc.author.scopusid 57299192300
gdc.author.scopusid 56412536200
gdc.author.scopusid 57780713800
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gdc.coar.access metadata only access
gdc.coar.type text::journal::journal article
gdc.description.departmenttemp Ahmadpour, S., Department of Computer Engineering, Kadir Has University, Istanbul, Turkey; Navimipour, N.J., Department of Computer Engineering, Kadir Has University, Istanbul, Turkey; Bahar, A.N., Department of Electrical and Computer Engineering, University of Saskatchewan, SK, Canada; Yalcin, S., Department of Computer Engineering, Nisantasi University, Istanbul, Turkey en_US
gdc.description.endpage 5 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q2
gdc.description.startpage 1 en_US
gdc.description.volume 22
gdc.description.wosquality Q2
gdc.identifier.openalex W4386265506
gdc.oaire.diamondjournal false
gdc.oaire.impulse 3.0
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gdc.oaire.keywords Silicon
gdc.oaire.keywords Atoms
gdc.oaire.keywords Layout
gdc.oaire.keywords Dangling Bond (DB)
gdc.oaire.keywords Oxide semiconductors
gdc.oaire.keywords Fault- tolerant systems
gdc.oaire.keywords Semiconductor quantum dots
gdc.oaire.keywords Dangling bonds
gdc.oaire.keywords Efficient architecture
gdc.oaire.keywords Fault-tolerant
gdc.oaire.keywords Majority gates
gdc.oaire.keywords Silicon quantum atomic designer
gdc.oaire.keywords Fault tolerant systems
gdc.oaire.keywords Fault-Tolerant
gdc.oaire.keywords Atomic silicon
gdc.oaire.keywords Quantum dots
gdc.oaire.keywords Full adders
gdc.oaire.keywords Dangling bond
gdc.oaire.keywords Quantum dot
gdc.oaire.keywords Fault tolerance
gdc.oaire.keywords Logic gates
gdc.oaire.keywords CMOS integrated circuits
gdc.oaire.keywords Digital signal processing
gdc.oaire.keywords Nanocrystals
gdc.oaire.keywords Energy efficiency
gdc.oaire.keywords Silicon Quantum Atomic Designer
gdc.oaire.keywords Atomic Silicon
gdc.oaire.keywords Adders
gdc.oaire.keywords MOS devices
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gdc.opencitations.count 5
gdc.plumx.crossrefcites 2
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gdc.plumx.scopuscites 8
gdc.scopus.citedcount 8
gdc.virtual.author Jafari Navimipour, Nima
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