Towards a Scalable and Efficient Full- Adder Structure in Atomic Silicon Dangling Band Technology

Abstract

Atomic Silicon Dangling Bond (ASDB) is a promising new nanoscale technology for fabricating logic gates and digital circuits. This technology offers tremendous advantages, such as small size, high speed, and low power consumption. As science and technology progress, ASDB technology may eventually replace the current VLSI technology. This nanoscale technology is still in its early stages of development. Recently, many computing circuits, such as full-adder, have been designed. However, these circuits have a common fundamental problem; they consume a lot of energy and occupy a lot of area, which reduces the performance of complex circuits. This paper proposes a novel ASDB layout for designing an efficient full-adder circuit in ASDB technology. Moreover, a four-bit ASDB ripple carry adder(RCA) is designed using the proposed ASDB full-adder. The proposed ASDB fulladder not only improves the stability of the output but also surpasses the previous works, in terms of energy and accuracy,by 90% and 38%, respectively. Also, it has very favorable conditions in terms of occupied area and is resistant to DB misalignment defects.