Novel efficient and scalable design of full-adder in atomic silicon dangling bonds (ASDB) technology

dc.authorid Rasmi, Hadi/0000-0002-6790-8684
dc.authorid Mosleh, Mohammad/0000-0002-0991-1623
dc.authorscopusid 58718414700
dc.authorscopusid 55411379000
dc.authorscopusid 55897274300
dc.authorscopusid 26422242900
dc.authorwosid Rasmi, Hadi/ACE-5487-2022
dc.contributor.author Jafari Navimipour, Nima
dc.contributor.author Mosleh, Mohammad
dc.contributor.author Navimipour, Nima Jafari
dc.contributor.author Kheyrandish, Mohammad
dc.contributor.other Computer Engineering
dc.date.accessioned 2024-06-23T21:37:25Z
dc.date.available 2024-06-23T21:37:25Z
dc.date.issued 2023
dc.department Kadir Has University en_US
dc.department-temp [Rasmi, Hadi; Mosleh, Mohammad; Kheyrandish, Mohammad] Islamic Azad Univ, Dept Comp Engn, Dezful Branch, Dezful, Iran; [Navimipour, Nima Jafari] Islamic Azad Univ, Dept Comp Engn, Tabriz Branch, Tabriz, Iran; [Navimipour, Nima Jafari] Kadir Has Univ, Fac Engn & Nat Sci, Dept Comp Engn, Istanbul, Turkiye; [Navimipour, Nima Jafari] Natl Yunlin Univ Sci & Technol, Future Technol Res Ctr, Touliu 64002, Taiwan en_US
dc.description Rasmi, Hadi/0000-0002-6790-8684; Mosleh, Mohammad/0000-0002-0991-1623 en_US
dc.description.abstract Atomic Silicon Dangling Bonds (ASDB) is an advanced emerging nanotechnology to replace CMOS technology; because it allows the designing of circuits with very high-speed and low-density. However, one of the most critical challenges in implementing circuits in ASDB nanotechnology is output stability and possible defects, such as DB omission, DB misalignment, and DB extra deposition, which can be overcome using a suitable designing pattern. Therefore, developing stable and robust structures is considered as one of essential topics in ASDB. This paper first proposes two novel and stable computing circuits, including a three-input majority voter (MV3) and three-input XOR (XOR3); based on triangular and rhombus patterns, respectively. Then, an efficient ASDB full-adder is designed using the suggested MV3 and XOR3 gates. Finally, two and four-bit ripple carry adders are developed using proposed full-adder. Simulation results indicate that the suggested MV3 and XOR3 are superior to previous designs, by more than 80%, 48%, and 9.5%, averagely; in terms of occupied area, energy, and occurrence, respectively. Moreover, the proposed gates are investigated against possible defects, and the results show high stability. en_US
dc.identifier.citationcount 2
dc.identifier.doi 10.1088/1402-4896/ad0711
dc.identifier.issn 0031-8949
dc.identifier.issn 1402-4896
dc.identifier.issue 12 en_US
dc.identifier.scopus 2-s2.0-85177749934
dc.identifier.scopusquality Q2
dc.identifier.uri https://doi.org/10.1088/1402-4896/ad0711
dc.identifier.uri https://hdl.handle.net/20.500.12469/5719
dc.identifier.volume 98 en_US
dc.identifier.wos WOS:001104452500001
dc.identifier.wosquality Q2
dc.language.iso en en_US
dc.publisher Iop Publishing Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 7
dc.subject nanotechnology en_US
dc.subject atomic silicon dangling bonds en_US
dc.subject majority voter(MV) en_US
dc.subject full-adder en_US
dc.title Novel efficient and scalable design of full-adder in atomic silicon dangling bonds (ASDB) technology en_US
dc.type Article en_US
dc.wos.citedbyCount 7
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