Growth Kinetics of Mps-Capped Cds Quantum Dots in Self-Assembled Thin Films

gdc.relation.journal Nanoscale Research Letters en_US
dc.contributor.author Koç, Kenan
dc.contributor.author Tepehan, Fatma Zehra
dc.contributor.author Tepehan, Galip Gültekin
dc.contributor.other 01. Kadir Has University
dc.date.accessioned 2019-06-27T08:04:00Z
dc.date.available 2019-06-27T08:04:00Z
dc.date.issued 2012
dc.description.abstract For this study we prepared colloidal CdS quantum dots using 3-mercaptopropyltrimethoxysilane as capping agent. Colloidal CdS quantum dots were directly deposited on glass substrates by a spin-coating process. Coated substrates were heat-treated between 225A degrees C and 325A degrees C for various heat treatment time intervals to investigate the growth kinetics of the quantum dots. Results showed that sizes of the CdS quantum dots grew approximately from 2.9 to 4.6 nm and the E (1s1s) energy values shifted approximately from 3.3 to 2.7 eV. Results showed that the average size of quantum dots increase by thermal treatment due to Ostwald ripening. The thermal process used to grow the size of quantum dots was examined according to the Lifshitz-Slyozov-Wagner theory. The activation energy of CdS quantum dots in thin films was calculated at approximately 44 kJ/mol. en_US]
dc.identifier.citationcount 8
dc.identifier.doi 10.1186/1556-276X-7-610 en_US
dc.identifier.issn 1931-7573 en_US
dc.identifier.issn 1931-7573
dc.identifier.issn 1556-276X
dc.identifier.scopus 2-s2.0-84870996696 en_US
dc.identifier.uri https://hdl.handle.net/20.500.12469/876
dc.identifier.uri https://doi.org/10.1186/1556-276X-7-610
dc.language.iso en en_US
dc.publisher Springer en_US
dc.relation.ispartof Nanoscale Research Letters
dc.rights info:eu-repo/semantics/openAccess en_US
dc.subject CdS quantum dots en_US
dc.subject 3-Mercaptopropyltrimethoxysilane en_US
dc.subject Growth kinetics en_US
dc.subject Ostwald ripening en_US
dc.subject Thin films en_US
dc.title Growth Kinetics of Mps-Capped Cds Quantum Dots in Self-Assembled Thin Films en_US
dc.type Article en_US
dspace.entity.type Publication
gdc.author.institutional Tepehan, Galip Gültekin en_US
gdc.bip.impulseclass C5
gdc.bip.influenceclass C5
gdc.bip.popularityclass C5
gdc.coar.access open access
gdc.coar.type text::journal::journal article
gdc.description.department Fakülteler, Mühendislik ve Doğa Bilimleri Fakültesi, Bilgisayar Mühendisliği Bölümü en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.volume 7 en_US
gdc.description.wosquality Q1
gdc.identifier.openalex W2118167487
gdc.identifier.pmid 23127193 en_US
gdc.identifier.wos WOS:000312087400001 en_US
gdc.oaire.accesstype GOLD
gdc.oaire.diamondjournal false
gdc.oaire.impulse 4.0
gdc.oaire.influence 3.0526848E-9
gdc.oaire.isgreen true
gdc.oaire.keywords Materials Science(all)
gdc.oaire.keywords Nano Express
gdc.oaire.keywords Thin films
gdc.oaire.keywords CdS quantum dots
gdc.oaire.keywords Growth kinetics
gdc.oaire.keywords Ostwald ripening
gdc.oaire.keywords Condensed Matter Physics
gdc.oaire.keywords 3-Mercaptopropyltrimethoxysilane
gdc.oaire.popularity 2.5011686E-9
gdc.oaire.publicfunded false
gdc.oaire.sciencefields 02 engineering and technology
gdc.oaire.sciencefields 0210 nano-technology
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gdc.openalex.normalizedpercentile 0.53
gdc.opencitations.count 8
gdc.plumx.crossrefcites 7
gdc.plumx.mendeley 19
gdc.plumx.scopuscites 9
gdc.scopus.citedcount 9
gdc.wos.citedcount 9
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